Toshiba and SanDisk reportedly to begin sub-30nm NAND flash production
Toshiba and its NAND flash partner SanDisk reportedly plan to begin mass producing NAND flash chips fabricated on 20nm-class process technology in the second half of 2010, according to industry sources. In line with the technology migration, SanDisk and Toshiba’s joint-venture manufacturing facilities in Yokkaichi (Mie prefecture, Japan) is expected to ramp up its monthly capacity to around 200,000 wafers.
Toshiba, which recently started mass production of 3-bit per cell (3bpc) 32nm devices, originally expected 32nm to account for over 50%of the total output from the Yokkaichi operations by the end of 2009, the sources said. But the ramp-up reportedly has been behind schedule, the sources added. Rival group Intel and Micron Technology have said they expect to introduce 2xnm technology later in 2009, according to previous reports. Mass production of their 32Gb NAND flash memory using 3bpc 34nm process technology is on track to take place at the two companies’ joint venture IM Flash Technologies.
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