Samsung begins volume producing 60nm DRAM
Samsung Electronics announced today that it has begun mass producing the industrys first 1Gb DDR2 DRAM using 60nmclass process technology. Use of the new process technology is a significant milestone in that it increases production efficiency by 40% over the 80nm process technology deployed in DRAM fabrication since early 2006, and offers twice the productivity of 90nm general process technology.
This new 3D transistor technology doubles the refresh cycle, which is critical for enabling efficient fabrication on a nanometer-scale. Samsung has been utilizing RCAT for DRAM fabrication from 90nm. This key 3D technology is expected to enable DRAM fabrication to 50nm and lower. In addition to its 60nm process technology innovation, Samsungs use of metal-insulator metal (MIM) for its capacitors provides enhanced data storage in sub-70nm designs. The 60nm 1Gb DDR2 DRAM was first developed by Samsung in 2005 and in October of last year, the company announced it has also developed DRAM produced on 50nm process technology. The 60nm process is expected to become the mainstream circuit technology for DRAM in 2008.
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