ProMOS to start 90nm process DDR2 production at 12-inch plant
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ProMOS Technologies will start a pilot run production for their 90nm DDR2 IC process at its 12-inch wafer plant later this month in Taiwan. This is good news for consumers because some of the cost savings related to the 12″ wafers might be passed along to consumers.
Since yield rates for 90nm process DDR has exceeded the targeted 80%, ProMOS? production migration to DDR is on schedule, the sources indicated, adding that ProMOS will still produce DDR2 on the 90nm node with aid supplied by its partner, Hynix Semiconductor, the sources indicated.
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