Micron Samples Industry’s Fastest Mobile DRAM
Micron Technology today announced that it is sampling to customers and major enablers the industry’s fastest 512 megabit (Mb) Mobile DRAM component, designed for the latest feature-rich mobile electronic devices. Mass production is expected in the second quarter of this year. With mobile applications adding increased computing and multimedia functionality, faster and better performing memory becomes paramount for optimizing performance.
In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack. The 512 Mb Mobile DRAM chip joins Micron’s broad family of innovative memory products for mobile applications that includes other Mobile DRAM parts, NAND Flash, Managed NAND, CellularRAM(TM) and Multichip Packages (MCP). Micron’s mobile product line comes in a wide variety of form factors and densities to meet the diverse needs of the growing mobile market.
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