IBM Technology Alliance Announces 28nm Process
In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology. GLOBALFOUNDRIES sent me an e-mail already this morning that states they plan to accept 28nm designs in 2H10 in Fab 1 in Dresden with production shortly thereafter. Looks like processors are about to get much smaller in the years to come.
Preliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power all in a chip that is half the size compared with 45nm technology. The high-k metal gate implementation allows one of the industrys smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.
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