IBM reveals embedded DRAM breakthrough
In papers presented at the International Solid State Circuits Conference (ISSCC) today, IBM revealed an on-chip memory technology that features what the company claims are the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).
This new technology, designed in stress-enabled 65nm silicon-on-insulator (SOI) using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory), IBM indicated. The company added that the breakthrough will more than triple the amount of memory contained on a single high-end chip, and its prototype eDRAM contains over 12 million bits and high-performance logic. IBM expects the technology to be a key feature of its 45nm microprocessor roadmap and will become available beginning in 2008.
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