Hynix receives DDR3 validation from Intel
Hynix Semiconductor today announced it has received validation on its DDR3 memory components and modules from Intel. The newly-validated DDR3 products are 1Gb DDR3 SDRAM component manufactured on 80nm process technology, 1GB 2GB DDR3 Unbuffered-DIMMs.
These devices have operating speeds of 800MHz and 1066MHz and a 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of a wide range of PCs, workstations and other applications. In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 25%, compared to the present generation DDR2. Hynixs three-dimensional transistor architecture also minimizes current leakage to further reduce overall current consumption and ensure data integrity.
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