GLOBALFOUNDRIES To Highlight 32nm/28nm Technology Leadership at GSA Expo
As the semiconductor industry begins its transition to the next technology node, GLOBALFOUNDRIES is on track to take its position as the foundry technology leader. On October 1 at the Global Semiconductor Alliance Emerging Opportunities Expo & Conference in Santa Clara, Calif., GLOBALFOUNDRIES will provide the latest details on its technology roadmap for the 32nm/28nm generations and its innovative Gate First approach to building transistors based on High-K Metal Gate (HKMG) technology.
GLOBALFOUNDRIES expects to start volume production of 32nm-SHP (Super High Performance) technology at Fab 1 in the second half of 2010. This technology will employ silicon-on-insulator (SOI) substrates and utilize GLOBALFOUNDRIES innovative Gate First approach to HKMG, which maximizes power efficiency and transistor scaling while minimizing die size and design complexity when compared to the alternative Gate Last approach. Yield progress continues with 24Mb SRAMs in double-digit natural yields on path to 50 per cent natural yields by year-end.
Comments are closed.