Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (RRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Crossbar today also announced it has developed a working Crossbar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.
Crossbar’s technology will deliver 20x faster write performance, 20x lower power consumption, and 10x the endurance at half the die size, compared to today’s best-in-class NAND Flash memory. With that breakthrough performance and reliability, very high capacity and low power consumption, Crossbar will enable a new wave of electronics innovation for consumer, enterprise, mobile, industrial and connected device applications. The company is currently completing the characterization and optimization of this device and plans to bring its first product to market in the embedded SOC market. Supporting Quotes:
“Non-volatile memory is ubiquitous today, as the storage technology at the heart of the over a trillion dollar electronics market – from tablets and USB sticks to enterprise storage systems,” said George Minassian, chief executive officer, Crossbar, Inc. “And yet today’s non-volatile memory technologies are running out of steam, hitting significant barriers as they scale to smaller manufacturing processes. With our working Crossbar array, we have achieved all the major technical milestones that prove our RRAM technology is easy to manufacture and ready for commercialization. It’s a watershed moment for the non-volatile memory industry.”