Samsung increases DRAM output on 0.11-micron node
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Samsung Electronics has increased its DRAM output that is using a 0.11-micron process at its 8-inch fabs to meet growing demand, as it still has issues at its 80nm node, according to market sources.
DRAM produced using the 0.11-micron process will be named D-generation products, while 80nm-made products are called E-generation DRAM, the sources said. Despite a Samsung press release last month announcing that the Korean firm has started volume production of 1Gb DDR2 DRAM memory using 80nm process technology, the sources claimed that Samsung still faces issues with its DRAM migration to 80nm production.
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