Samsung develops new memory chip – PRAM
Samsung Electronics Co. on Monday unveiled a new type of memory chip that it said will allow digital devices to work faster by saving new data more quickly. The phase-change random access memory, or PRAM, chip is nonvolatile, meaning it will retain data even when an electronic device is turned off, and is about 30 times faster than conventional flash memory, Samsung said.
It is expected to be available in 2008, Samsung said. A 512-megabit prototype PRAM device was unveiled at a news conference in Seoul on Monday. Samsung said the PRAM chips use vertical diodes and a three-dimensional transistor structure to create a small cell size. Unlike NOR and NAND chips, they don’t need to first erase any old data in a separate step before storing any new data, it said.
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