Samsung today announced a next-generation 64GB embedded multimedia card (eMMC) using 10 nanometer (nm)-class process technology. The new 64Gb NAND memory went into production late last month. Samsung is applying 64Gb high-performance NAND memory using its10nm-class technology to the new 64GB eMMC Pro Class 2000 memory solution. The new memory solution has a random write speed of 2,000 IOPS (input/output per second) and a random read speed of 5,000 IOPS. In addition, sequential read and write speeds are 260 megabytes per second (MB/s) and 50MB/s respectively, which is up to 10 times faster than a class 10 external memory card that reads at 24MB/s and writes at 12MB/s, greatly enhancing the smoothness of multitasking on mobile gadgets.
Myungho Kim, vice president of Memory marketing, Device Solutions, Samsung Electronics noted, "The new high-speed, small form factor eMMC reinforces Samsung's technology leadership in storage memory solutions. We look forward to expanding our line-up of embedded memory solutions in conjunction with the new chip's design, in pursuing a system-level adoption of application processors and other key components that form the foundation for the most advanced mobile platforms. This will allow us to better attend to time-to-market demands enabling the design of more convenient features for next-generation mobile applications."