Legit News
Samsung increases DRAM output on 0.11-micron node
Samsung Electronics has increased its DRAM output that is using a 0.11-micron process at its 8-inch fabs to meet growing demand, as it still has issues at its 80nm node, according to market sources.
DRAM produced using the 0.11-micron process will be named D-generation products, while 80nm-made products are called E-generation DRAM, the sources said. Despite a Samsung press release last month announcing that the Korean firm has started volume production of 1Gb DDR2 DRAM memory using 80nm process technology, the sources claimed that Samsung still faces issues with its DRAM migration to 80nm production.
Posted by | Fri, Sep 22, 2006 - 06:15 AM
Search
Hot Topics
- Sandy Bridge Overclocking Question(s)
- Intel settles New York antitrust case for $6.5 Million
- PowerColor HD7970 w/ Dual Fan Cooler Announced
- AMD Radeon HD 7950 3GB CrossFire Review
- AMD 1090T AND INTEL 2500K
- AMD 1090T AND INTEL 2500K
- AMD 1090T AND INTEL 2500K
- To Upgrade or not to upgrade?
- GIGABYTE Partners w/ CybperPowerPC To Offer Intel Warranty
- AMD Sends Performance Enhancing Benchmark Pills to LR
Socialize